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Package Marking and Ordering Information
Part Number
FCP13N60N
FCPF13N60NT
Top Mark
FCP13N60N
FCPF13N60NT
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1 mA, V GS = 0 V, T C = 25 o C
600
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 1 mA, Referenced to
25 o C
-
0.73
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 480 V, V GS = 0 V
V DS = 480 V, V GS = 0 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
-
-
-
-
-
-
10
100
±100
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 6.5 A
V DS = 40 V, I D = 6.5 A
2.0
-
-
-
0.220
16.3
4.0
0.258
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 100 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
V DS = 380 V,I D = 6.5 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
1325
50
3
30
145
30.4
6.0
9.5
2.8
1765
65
5
-
-
39.5
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 6.5 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
14.5
10.6
45
9.8
39
31.2
100
29.6
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
13*
39
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 6.5 A
V GS = 0 V, I SD = 6.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
287
3.5
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 4.3 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 13 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. C1
2
www.fairchildsemi.com
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